产品详情
Features
- IT (RMS) : 3 A
- VDRM : 800 V (Tj = 125°C)
- IFGTI, IRGTI, IRGTIII : 30 mA
- Viso : 2000 V
- The Product guaranteed maximum junction temperature 150°C
- Insulated Type
- Planar Type
- UL Recognized: Yellow Card No. E223904 File No. E80271
Outline
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter Symbol Voltage class Unit Conditions 14 Repetitive peak off-state voltageNote1 VDRM 800 V Tj = 125°C 700 V Tj = 150°C Non-repetitive peak off-state voltageNote1 VDSM 840 V BCR3PM-14LG Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 3.0 A Commercial frequency, sine full wave 360° conduction, Tc = 130°C Surge on-state current ITSM 30 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t for fusing I2t 3.7 A2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation PGM 5 W Average gate power dissipation PG (AV) 0.5 W Peak gate voltage VGM 10 V Peak gate current IGM 2 A Junction temperature Tj – 40 to +150 °C Storage temperature Tstg – 40 to +150 °C Mass — 2.0 g Typical value Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute, T1 · T2 · G terminal to case Notes: 1. Gate open Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150°C, VDRM applied On-state voltage VTM — — 1.6 V Tc = 25°C, ITM = , Instantaneous measurement Note2 Gate trigger voltage I VFGTI — — 1.5 V Tj = 25°C, VD = 6 V, RL = 6 W, RG = 330 W II VRGTI — — 1.5 V III VRGTIII — — 1.5 V Note2 Gate trigger current I IFGTI — — 30 mA Tj = 25°C, VD = 6 V, RL = 6 W, RG = 330 W II IRGTI — — 30 mA III IRGTIII — — 30 mA Gate non-trigger voltage VGD 0.2/0.1 — — V Tj = 125°C/150°C, VD = 1/2 VDRM Thermal resistance Rth (j-c) — — 5.2 °C/W Junction to caseNote3 Critical-rate of rise of off-state commutating voltageNote4 (dv/dt)c 5/1 — — V/ms Tj = 125°C/150°C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is /W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –/ms 3. Peak off-state voltage VD = 400 V Supply Voltage (di/dt)c Main Current Main Voltage (dv/dt)c VD Time Time Time
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