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BCR3PM-14LG

品牌：瑞萨（Renesas）

产品：可控硅

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BCR3PM-14LG

Triac
Medium Power Use

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Features

IT (RMS) : 3 A
VDRM : 800 V (Tj = 125°C)
IFGTI, IRGTI, IRGTIII : 30 mA
Viso : 2000 V
The Product guaranteed maximum junction temperature 150°C
Insulated Type
Planar Type
UL Recognized: Yellow Card No. E223904 File No. E80271

Outline

Applications

Washing machine, inversion operation of capacitor motor, and other general controlling devices

Maximum Ratings

Parameter

Symbol

Voltage class

Unit

Conditions

14

Repetitive peak off-state voltageNote1

VDRM

800

V

Tj = 125°C

700

V

Tj = 150°C

Non-repetitive peak off-state voltageNote1

VDSM

840

V

BCR3PM-14LG

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

IT (RMS)

3.0

A

Commercial frequency, sine full wave

360° conduction, Tc = 130°C

Surge on-state current

ITSM

30

A

60Hz sinewave 1 full cycle, peak value, non-repetitive

I2t for fusing

I2t

3.7

A2s

Value corresponding to 1 cycle of half wave 60Hz, surge on-state current

Peak gate power dissipation

PGM

5

W

Average gate power dissipation

PG (AV)

0.5

W

Peak gate voltage

VGM

10

V

Peak gate current

IGM

2

A

Junction temperature

Tj

– 40 to +150

°C

Storage temperature

Tstg

– 40 to +150

°C

Mass

—

2.0

g

Typical value

Isolation voltage

Viso

2000

V

Ta = 25°C, AC 1 minute,

T1 · T2 · G terminal to case

Notes: 1. Gate open

Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current

IDRM

—

—

2.0

mA

Tj = 150°C, VDRM applied

On-state voltage

VTM

—

—

1.6

V

Tc = 25°C, ITM = 4.5 A, Instantaneous measurement

Note2

Gate trigger voltage

I

VFGTI

—

—

1.5

V

Tj = 25°C, VD = 6 V, RL = 6 W, RG = 330 W

II

VRGTI

—

—

1.5

V

III

VRGTIII

—

—

1.5

V

Note2

Gate trigger current

I

IFGTI

—

—

30

mA

Tj = 25°C, VD = 6 V, RL = 6 W, RG = 330 W

II

IRGTI

—

—

30

mA

III

IRGTIII

—

—

30

mA

Gate non-trigger voltage

VGD

0.2/0.1

—

—

V

Tj = 125°C/150°C, VD = 1/2 VDRM

Thermal resistance

Rth (j-c)

—

—

5.2

°C/W

Junction to caseNote3

Critical-rate of rise of off-state commutating voltageNote4

(dv/dt)c

5/1

—

—

V/ms

Tj = 125°C/150°C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Tj = 125°C/150°C

2. Rate of decay of on-state commutating current

(di/dt)c = –1.5 A/ms

3. Peak off-state voltage

VD = 400 V

Supply Voltage                              Time

(di/dt)c

Main Current                               Time

Main Voltage                              Time

(dv/dt)c                           VD

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Parameter	Symbol	Voltage class	Unit	Conditions
		14
Repetitive peak off-state voltageNote1	VDRM	800	V	Tj = 125°C
		700	V	Tj = 150°C
Non-repetitive peak off-state voltageNote1	VDSM	840	V

Parameter	Symbol	Ratings	Unit	Conditions
RMS on-state current	IT (RMS)	3.0	A	Commercial frequency, sine full wave 360° conduction, Tc = 130°C
Surge on-state current	ITSM	30	A	60Hz sinewave 1 full cycle, peak value, non-repetitive
I2t for fusing	I2t	3.7	A2s	Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Peak gate power dissipation	PGM	5	W
Average gate power dissipation	PG (AV)	0.5	W
Peak gate voltage	VGM	10	V
Peak gate current	IGM	2	A
Junction temperature	Tj	– 40 to +150	°C
Storage temperature	Tstg	– 40 to +150	°C
Mass	—	2.0	g	Typical value
Isolation voltage	Viso	2000	V	Ta = 25°C, AC 1 minute, T1 · T2 · G terminal to case

Parameter		Symbol	Min.	Typ.	Max.	Unit	Test conditions
Repetitive peak off-state current		IDRM	—	—	2.0	mA	Tj = 150°C, VDRM applied
On-state voltage		VTM	—	—	1.6	V	Tc = 25°C, ITM = 4.5 A, Instantaneous measurement
Note2 Gate trigger voltage	I	VFGTI	—	—	1.5	V	Tj = 25°C, VD = 6 V, RL = 6 W, RG = 330 W
	II	VRGTI	—	—	1.5	V
	III	VRGTIII	—	—	1.5	V
Note2 Gate trigger current	I	IFGTI	—	—	30	mA	Tj = 25°C, VD = 6 V, RL = 6 W, RG = 330 W
	II	IRGTI	—	—	30	mA
	III	IRGTIII	—	—	30	mA
Gate non-trigger voltage		VGD	0.2/0.1	—	—	V	Tj = 125°C/150°C, VD = 1/2 VDRM
Thermal resistance		Rth (j-c)	—	—	5.2	°C/W	Junction to caseNote3
Critical-rate of rise of off-state commutating voltageNote4		(dv/dt)c	5/1	—	—	V/ms	Tj = 125°C/150°C