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HIT667

产品:三极管
在线阅读:HIT667.pdf

HIT667


Silicon NPN Epitaxial

产品详情

Features

 

  •  Low frequency power amplifier
  •  Complementary pair with HIT647

 

Outline

 

 

Absolute Maximum Ratings(Ta = 25°C)

 

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

120

V

Collector to emitter voltage

VCEO

100

V

Emitter to base voltage

VEBO

6

V

Collector current

IC

1.0

A

Collector peak current

IC  (peak)  *1

2.0

A

Collector power dissipation

PC

0.9

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20%

 

 

 

 

Electrical Characteristics

 

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

120

V

IC  = 100 mA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

100

V

IC  = 10 mA, RBE  =

Emitter to base breakdown voltage

V(BR)EBO

6

V

IE  = 100 mA, IC = 0

Collector cutoff current

ICBO

            

500

nA

VCB  = 120 V, IE = 0

Emitter cutoff current

IEBO

500

nA

VEB  = 6 V, IC = 0

DC current transfer ratio

hFE1

140

330

VCE  = 2 V, IC  = 150 mA

hFE2

40

VCE  = 5 V, IC  = 1 A

Collector to emitter saturation voltage

VCE(sat)

0.5

V

IC  = 500 mA, IB = 50 mA

Base to emitter saturation voltage

VBE(sat)

1.1

V

IC  = 500 mA, IB = 50 mA

 

 

相关产品

2SC458
2SD667
HIT647
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