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HIT647

产品:三极管
在线阅读:HIT647.pdf

HIT647


Silicon PNP Epitaxial

产品详情

Features

 

  •  Low frequency power amplifier
  •  Complementary pair with HIT667

 

Outline

 

 

Absolute Maximum Ratings(Ta = 25°C)

 

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

-120

V

Collector to emitter voltage

VCEO

-100

V

Emitter to base voltage

VEBO

-6

V

Collector current

IC

-1.0

A

Collector peak current

IC  (peak)  *1

-2.0

A

Collector power dissipation

PC

0.9

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note : 1. PW 10 ms, Duty cycle 20%

 

 

 

 

Electrical Characteristics

 

 

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

-120

V

IC  = -100 mA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

-100

V

IC  = -10 mA, RBE  =

Emitter to base breakdown voltage

V(BR)EBO

-6

V

IE  = -100 mA, IC = 0

Collector cutoff current

ICBO

            

-500

nA

VCB  = -120 V, IE  = 0

Emitter cutoff current

IEBO

-500

nA

VEB  = -6 V, IC = 0

DC current transfer ratio

hFE1

140

350

VCE  = -2 V, IC  = -150 mA

hFE2

40

VCE  = -5 V, IC  = -1 A

Collector to emitter saturation voltage

VCE(sat)

-0.5

V

IC  = -500 mA, IB  = -50 mA

Base to emitter saturation voltage

VBE(sat)

-1.1

V

IC  = -500 mA, IB  = -50 mA

 

 

 

 

 

 

 

相关产品

HIT667
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